The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Feb. 28, 2019
Applicants:
Mustafa Karabiyik, Miami, FL (US);
Nezih Pala, Fort Lauderdale, FL (US);
Inventors:
Mustafa Karabiyik, Miami, FL (US);
Nezih Pala, Fort Lauderdale, FL (US);
Assignee:
The Florida International University Board of Trustees, Miami, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/11 (2006.01); H01L 31/02 (2006.01); H01L 31/113 (2006.01); H01L 31/028 (2006.01); H01L 31/0224 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1136 (2013.01); H01L 31/028 (2013.01); H01L 31/022408 (2013.01); H01L 29/1606 (2013.01);
Abstract
Devices and methods for Terahertz (THz) sensing/detection, imaging, spectroscopy, and communication are provided. A graphene-based field effect transistor (FET) can have a quality factor of greater than 400 and a responsivity of at least 400 Volts per Watt. A FET sensor can include a substrate, a gate disposed on the substrate, an insulation layer disposed on the gate and the substrate, a source terminal and a drain terminal disposed on the substrate, and a graphene layer disposed on the insulation layer.