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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10580922 B1

PDFFull Text
Date of Patent:
Mar. 03, 2020

Filed:

Jan. 09, 2014

Method of providing a boron doped region in a substrate and a solar cell using such a substrate

Applicant:

Stichting Energieonderzoek Centrum Nederland, Petten, NL;

Inventors:

Yuji Komatsu, Petten, NL;

John Anker, Petten, NL;

Paul Cornelis Barton, Petten, NL;

Ingrid Gerdina Romijn, Petten, NL;

Assignee:

NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO, The Hague, NL;

Attorney:

Young & Thompson

Primary Examiner:

Daniel P Malley, Jr

Int. Cl.
CPC ...
H01L 31/065 (2012.01); H01L 31/18 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 31/0352 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/065 (2013.01); H01L 21/2255 (2013.01); H01L 21/324 (2013.01); H01L 31/03529 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); H01L 31/1868 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

Method of providing a boron doped region () in a silicon substrate (), includes the steps of: (a) depositing a boron doping source () over a first surface () of the substrate (); (b) annealing the substrate () for diffusing boron from the boron doping source () into the first surface (), thereby yielding a boron doped region; (c) removing the boron doping source () from at least part of the first surface (); (d) depositing undoped silicon oxide () over the first surface (); and (e) annealing the substrate () for lowering a peak concentration of boron in the boron doped region () through boron absorption by the undoped silicon oxide. The silicon oxide () acts as a boron absorber to obtain the desired concentration of the boron doped region ().

Find Patent Forward Citations

Komatsu, Yuji. (2020). Method of providing a boron doped region in a substrate and a solar cell using such a substrate (U.S. Patent No. 10580922). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10580922

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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