The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Apr. 24, 2018
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Yoshiaki Toyoda, Matsumoto, JP;
Hideaki Katakura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, Kanagawa, JP;
Abstract
A p-type anode region that forms a contact of an anode electrode on a front surface of a semiconductor substrate and a p-type starting substrate of a rear surface of the semiconductor substrate is formed on the front surface of the semiconductor substrate, whereby an up-anode type vertical diode is configured. The semiconductor substrate has a p-type epitaxial layer stacked on the p-type starting substrate, and a p-type transition layer in a surface layer of the p-type epitaxial layer, facing the p-type starting substrate. A p-type anode diffusion region is provided between a p-type surface anode region and the p-type transition layer, and contacts the p-type surface anode region and the p-type transition layer. A p-type impurity concentration of the p-type anode diffusion region decreases from an interface with the p-type surface anode region toward an interface with the p-type transition layer.