The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
May. 16, 2017
Applicant:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Inventors:
Chang-Beom Eom, Madison, WI (US);
Hyungwoo Lee, Madison, WI (US);
Assignee:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/778 (2013.01); H01L 29/7781 (2013.01);
Abstract
Oxide heterostructures that form spatially separated electron-hole bilayers are provided. Also provided are electronic devices that incorporate the oxide heterostructures. The oxide heterostructure includes a base layer of SrTiO, a polar layer of LaAlO, and a non-polar layer of SrTiO. Within the oxide heterostructures, a two-dimensional hole gas (2DHG) is formed at the interface between the non-polar layer and the polar layer and a two-dimensional electron gas (2DEG) is formed at the interface between the polar layer and the base layer.