The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Oct. 24, 2017
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Jung-Bae Kim, Yongin, KR;
Bo-Yong Chung, Yongin, KR;
Hai-Jung In, Yongin, KR;
Dong-Gyu Kim, Yongin, KR;
SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;
Abstract
A thin film transistor includes a substrate, a semiconductor layer on the substrate, a first insulating layer covering the substrate and the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the semiconductor layer, a second insulating layer covering the first gate electrode and the first insulating layer, a second gate electrode on the second insulating layer and overlapping the semiconductor layer and the first gate electrode, a third insulating layer covering the second gate electrode, a first contact hole defined in the first insulating layer, the second insulating layer and the third insulating layer, and through which a portion of the semiconductor layer is exposed, and a source electrode and a drain electrode connected to the semiconductor layer through the first contact hole.