The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Mar. 01, 2018
Sandisk Technologies Llc, Plano, TX (US);
Zhixin Cui, Yokkaichi, JP;
Hiroshi Minakata, Yokkaichi, JP;
Keigo Kitazawa, Yokkaichi, JP;
Yoshiyuki Okura, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A three-dimensional memory device includes a first-tier structure containing a first alternating stack of first insulating layers and first electrically conductive layers that has first stepped surfaces, and a first retro-stepped dielectric material portion contacting the first stepped surfaces of the first alternating stack, and a second-tier structure containing a second alternating stack of second insulating layers and second electrically conductive layers that has second stepped surfaces, and a second retro-stepped dielectric material portion contacting the second stepped surfaces of the second alternating stack. The first retro-stepped dielectric material portion has a higher etch rate than the second retro-stepped dielectric material portion. Memory stack structures vertically extend through the first alternating stack and the second alternating stack. Each of the memory stack structures includes a memory film and a vertical semiconductor channel.