The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Jul. 18, 2018
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Da-Zen Chuang, Taipei, TW;
Chih-Chung Sun, Zhubei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 13/02 (2006.01); G11C 11/401 (2006.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); G11C 11/401 (2013.01); G11C 13/025 (2013.01); H01L 27/108 (2013.01); H01L 27/10805 (2013.01); H01L 27/10885 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01);
Abstract
The present disclosure provides a DRAM cell structure. The DRAM cell structure includes a substrate, a gate structure disposed in the substrate, a source region and a drain region disposed in the substrate respectively at two sides of the gate structure, a landing pad disposed over the drain region, a plurality of carbon nanotubes disposed on the landing pad, a top electrode disposed over the plurality of carbon nanotubes, and a dielectric layer disposed between the top electrode and the plurality of carbon nanotubes.