The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Dec. 02, 2018
Nanya Technology Corporation, New Taipei, TW;
Fang-Wen Liu, New Taipei, TW;
Tseng-Fu Lu, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A semiconductor structure includes a silicon control rectifier (SCR) region and a NPN region adjacent to the SCR region. The silicon control rectifier (SCR) region includes a first p-well region, a first n-well region surrounded by the first p-well region and a first P+ region in the first p-well region and spaced apart from the first n-well region. The NPN region includes a second p-well region, a first N+ region, a second N+ region and a second P+ region. The first N+ region is coupled to the second p-well region and an electrostatic discharge source. The second N+ region is coupled to the second p-well region and spaced apart from the first N+ region. The second P+ region is disposed in the second p-well region and equipotentially connected to the first P+ region in the first p-well region.