The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Jul. 09, 2015
Oxford University Innovation Limited, Oxford, GB;
OXFORD UNIVERSITY INNOVATION LIMITED, Botley, Oxford, GB;
Abstract
The present invention provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises: (i) exposing a substrate to a vapour comprising a first precursor compound in a first chamber to produce a layer of the first precursor compound on the substrate; and (ii) exposing the layer of the first precursor compound to a vapour comprising a second precursor compound in a second chamber to produce the layer of a crystalline material, wherein the pressure in the second chamber is above high vacuum. The invention also provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises exposing a layer of a first precursor compound on a substrate to a vapour comprising a second precursor compound in a chamber to produce the layer of a crystalline material, wherein the pressure in the chamber is greater than high vacuum and less than atmospheric pressure. The invention also provides a process for producing a semiconductor device comprising a layer of a crystalline material, which process comprises producing said layer of a crystalline material by a process as according to the invention.