The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Dec. 12, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Ji-su Kim, Seoul, KR;

Dae-seok Byeon, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/28 (2006.01); G11C 7/14 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 7/14 (2013.01); G11C 16/0483 (2013.01); G11C 16/28 (2013.01); G11C 16/34 (2013.01); G11C 16/30 (2013.01); G11C 2211/563 (2013.01);
Abstract

A method of operating a memory device to read data may include determining, in a first read interval associated with a first read operation, a threshold voltage distribution of a most significant program state of a target logical memory page included in a first physical memory page among a plurality of physical memory pages, the first read operation being an operation of reading the target logical memory page of the first physical memory page; transmitting, to a memory controller, a distribution determination result, the distribution determination result being related to the threshold voltage distribution; receiving, from the memory controller, offset levels corrected based on the distribution determination result; and adjusting a read voltage based on offset levels prior to performing a second read operation on a second physical memory page among the plurality of physical memory pages.


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