The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Jun. 14, 2019
Applicant:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventors:

Jung Hwan Lee, Guri-si, KR;

Dae Yong Shim, Seoul, KR;

Kang Seol Lee, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 11/4094 (2006.01); G11C 11/4091 (2006.01); G11C 5/14 (2006.01); G11C 7/08 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 5/147 (2013.01); G11C 7/08 (2013.01); G11C 11/4074 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01);
Abstract

A semiconductor memory apparatus includes a driving voltage providing circuit suitable for selectively providing a first driving voltage, a second driving voltage, a third driving voltage, a ground voltage, and a precharge voltage to a first driving line and a second driving line in response to an active signal, a cell characteristic information signal, and a precharge signal. The semiconductor memory apparatus also includes a sense amplifier suitable for operating by being applied with voltages provided from the first and second driving lines.


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