The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Jun. 19, 2018
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Yoshiaki Watanabe, Kanagawa, JP;

Hironobu Narui, Kanagawa, JP;

Yuichi Kuromizu, Kanagawa, JP;

Yoshinori Yamauchi, Kanagawa, JP;

Yoshiyuki Tanaka, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); G02B 6/42 (2006.01); H01S 5/022 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
G02B 6/4296 (2013.01); H01S 5/02284 (2013.01); H01S 5/02288 (2013.01); H01S 5/0425 (2013.01); H01S 5/18311 (2013.01); H01S 5/18388 (2013.01); H01S 5/18394 (2013.01); H01S 5/2214 (2013.01); H01S 5/32308 (2013.01); H01S 2301/18 (2013.01); H01S 2301/203 (2013.01);
Abstract

A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.


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