The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Jan. 29, 2019
Applicant:
Elenion Technologies, Llc, New York, NY (US);
Inventor:
Yangjin Ma, New York, NY (US);
Assignee:
Elenion Technologies, LLC, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/125 (2006.01); G02B 6/27 (2006.01); G02B 6/126 (2006.01); G02B 6/122 (2006.01);
U.S. Cl.
CPC ...
G02B 6/125 (2013.01); G02B 6/126 (2013.01); G02B 6/1228 (2013.01); G02B 6/2726 (2013.01); G02B 6/2766 (2013.01); G02B 2006/12152 (2013.01);
Abstract
A SOI bent taper structure is used as a mode convertor. By tuning the widths of the bent taper and the bend angles, almost lossless mode conversion is realized between TE0 and TE1 in a silicon waveguide. The simulated loss is <0.05 dB across C-band. This bent taper can be combined with bi-layer TM0-TE1 rotator to reach very high efficient TM0-TE0 polarization rotator. An ultra-compact (9 μm) bi-layer TM0-TE1 taper based on particle swarm optimization is demonstrated. The entire TM0-TE0 rotator has a loss <0.25 dB and polarization extinction ratio >25 dB, worst-case across the C-band.