The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Jan. 19, 2016
Applicant:
Invensense, Inc., San Jose, CA (US);
Inventors:
Fang Liu, San Jose, CA (US);
Jim Salvia, Redwood City, CA (US);
Zhineng Zhu, Fremont, CA (US);
Michael Perrott, Nashua, NH (US);
Assignee:
INVENSENSE, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/04 (2006.01); G01N 27/14 (2006.01); H01L 23/34 (2006.01); G01N 27/12 (2006.01);
U.S. Cl.
CPC ...
G01N 27/14 (2013.01); G01N 27/046 (2013.01); G01N 27/123 (2013.01); G01N 27/128 (2013.01); H01L 23/345 (2013.01);
Abstract
A gas sensor device with temperature uniformity is presented herein. In an implementation, a device includes a complementary metal-oxide semiconductor (CMOS) substrate layer, a dielectric layer and a gas sensing layer. The dielectric layer is deposited on the CMOS substrate layer. Furthermore, the dielectric layer includes a temperature sensor and a heating element coupled to a heat transfer layer associated with a set of metal interconnections. The gas sensing layer is deposited on the dielectric layer.