The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Jul. 10, 2015
Applicant:
SK Siltron Co., Ltd., Gumi-si, Gyeongsangbuk-do, KR;
Inventors:
Jong Min Kang, Gumi-si, KR;
Do Won Song, Gumi-si, KR;
Assignee:
SK Siltron Co., Ltd., Gumi-si, Gyeongsangbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/00 (2006.01); C30B 15/20 (2006.01); C30B 29/06 (2006.01); C30B 15/04 (2006.01);
U.S. Cl.
CPC ...
C30B 15/203 (2013.01); C30B 15/04 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01);
Abstract
An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding part arranged inside the chamber; and a pulling part for pulling a single crystal growing from the molten silicon solution, wherein the method can comprise a step of respectively growing a neck part, a shoulder part and a body part.