The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Jul. 24, 2019
Applicant:

Lumentum Japan, Inc., Sagamihara, Kanagawa, JP;

Inventors:

Takeshi Kitatani, Tokyo, JP;

Koichiro Adachi, Tokyo, JP;

Assignee:

Lumentum Japan, Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/40 (2006.01); H01S 5/12 (2006.01); H01S 5/227 (2006.01); H01S 5/22 (2006.01); H01S 5/026 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01S 5/4087 (2013.01); H01S 5/026 (2013.01); H01S 5/1231 (2013.01); H01S 5/02284 (2013.01); H01S 5/22 (2013.01); H01S 5/2272 (2013.01); H01S 2304/00 (2013.01);
Abstract

In the arrayed semiconductor optical device, a plurality of semiconductor optical devices including a first semiconductor optical device and a second semiconductor optical device are monolithically integrated on a semiconductor substrate, each of the semiconductor optical devices includes a first semiconductor layer having a multiple quantum well layer and a grating layer disposed on an upper side of the first semiconductor layer, a layer thickness of the first semiconductor layer of the first semiconductor optical device is thinner than a layer thickness of the first semiconductor layer of the second semiconductor optical device, and a height of the grating layer of the first semiconductor optical device is lower than a height of the grating layer of the second semiconductor optical device corresponding to difference in the layer thickness of the first semiconductor layer.


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