The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Oct. 30, 2017
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Yoshiaki Nakao, Kanagawa, JP;

Kazuyuki Kouno, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); G11C 7/14 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); G11C 7/14 (2013.01); G11C 13/003 (2013.01); G11C 13/0033 (2013.01); G11C 13/0064 (2013.01); H01L 27/105 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/1233 (2013.01); G11C 2213/75 (2013.01); G11C 2213/79 (2013.01);
Abstract

A semiconductor memory device includes a first select line and a second select line. A first memory element among a plurality of memory elements has a first top electrode and a first bottom electrode. The first top electrode is connected to the first select line and the first bottom electrode is connected to the second select line. A second memory element among the plurality of memory elements, which is disposed adjacent to the first memory element, has a second top electrode and a second bottom electrode. The second top electrode is connected to the first select line, and the second bottom electrode is connected to the first select line without passing a resistive element of a memory element other than the second memory element.


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