The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Mar. 02, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Akiyuki Murayama, Tokyo, JP;

Takeshi Iwasaki, Kuwana Mie, JP;

Tadashi Kai, Yokohama Kanagawa, JP;

Tadaomi Daibou, Yokohama Kanagawa, JP;

Masaki Endo, Kawasaki Kanagawa, JP;

Taichi Igarashi, Fuchu Tokyo, JP;

Junichi Ito, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01L 43/12 (2013.01);
Abstract

According to one embodiment, a magnetic memory device includes a conductive underlayer having an amorphous structure and containing at least one first predetermined element selected from molybdenum (Mo), magnesium (Mg), rhenium (Re), tungsten (W), vanadium (V), and manganese (Mn), and a stacked structure provided on the underlayer, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.


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