The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Jun. 22, 2016
Dowa Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;
Yasuhiro Watanabe, Tokyo, JP;
Takehiko Fujita, Tokyo, JP;
DOWA Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;
Abstract
A group III nitride semiconductor light-emitting element having longer element life than conventional group III nitride semiconductor light-emitting elements and a method of manufacturing the same are provided. A group III nitride semiconductor light-emitting elementcomprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated bodyobtained by alternately laminating a barrier layerand a well layernarrower in bandgap than the barrier layerin the stated order so that the number of barrier layersand the number of well layersare both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer, wherein the AlN guide layerhas a thickness of 0.5 nm or more and 2.0 nm or less.