The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Dec. 13, 2018
Applicant:

Asahi Kasei Microdevices Corporation, Chiyoda-ku, Tokyo, JP;

Inventors:

Osamu Morohara, Tokyo, JP;

Hiromi Fujita, Tokyo, JP;

Hirotaka Geka, Tokyo, JP;

Assignee:

Asahi Kasei Microdevices Corporation, Chiyoda-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/02 (2010.01); H01L 33/24 (2010.01); H01L 33/12 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/305 (2013.01); H01L 33/025 (2013.01); H01L 33/12 (2013.01); H01L 33/24 (2013.01); H01L 33/30 (2013.01); H01L 33/06 (2013.01);
Abstract

Disclosed is an infrared light emitting device including: a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light emitting layer formed on the first layer; and a second layer formed on the light emitting layer and having a second conductivity type, wherein the first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t≤2360×(y(1)−x(j))−240 (0.11≤y(1)−x(j)≤0.19), 0<t≤−1215×(y(1)−x(j))+427 (0.19<y(1)−x(j)≤0.33), and 0<x(j)<0.18.


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