The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Feb. 21, 2017
Applicant:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Inventors:
Jin Hong Park, Hwaseong-si, KR;
Hyung Youl Park, Gimpo-si, KR;
Jeong Hoon Kim, Seongnam-si, KR;
Woo Young Choi, Changwon-si, KR;
Assignee:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2012.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/072 (2013.01); H01L 31/028 (2013.01); H01L 31/0224 (2013.01); H01L 31/022466 (2013.01); H01L 31/1864 (2013.01); H01L 31/1884 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
In case of forming electrodes for electronic device using a two-dimensional semiconductor, a two-dimensional semiconductor layer doped into n-type or p-type is formed on a substrate, a first area and a second area of the doped two-dimensional semiconductor layer is patterned into a predetermined pattern shape, and a first electrode and a second electrode are formed on the patterned first and second areas, respectively.