The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Apr. 13, 2016
Lg Electronics Inc., Seoul, KR;
Sunho Kim, Seoul, KR;
Heonmin Lee, Seoul, KR;
Kwangsun Ji, Seoul, KR;
Youngjoo Eo, Seoul, KR;
Junghoon Choi, Seoul, KR;
Sehwon Ahn, Seoul, KR;
LG ELECTRONICS INC., Seoul, KR;
Abstract
Discussed is a method of manufacturing a solar cell including preparing a single crystalline silicon substrate having a first conductive type impurity; forming a non-single crystalline silicon emitter layer having a second conductive type impurity opposite to the first conductive type impurity on a first surface of the single crystalline silicon substrate; forming a first transparent conductive oxide layer on the first surface of the single crystalline silicon substrate; forming a first electrode electrically connected to the first transparent conductive oxide layer; and forming a second electrode electrically connected to the single crystalline silicon substrate, wherein the forming of the first electrode includes; forming a first seed layer on the first transparent conductive oxide layer, and forming a first plating layer over the first seed layer by plating a first conductive material.