The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Apr. 29, 2019
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
TingGang Zhu, Cupertino, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Ping Huang, Shanghai, CN;
Yueh-Se Ho, Sunnyvale, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A nitride-based Schottky diode includes a nitride-based semiconductor body, a first metal layer forming the anode electrode, a cathode electrode in electrical contact with the nitride-based semiconductor body, and a termination structure including a guard ring and a dielectric field plate. In one embodiment, the cathode electrode is formed on the front side of the nitride-based semiconductor body, in an area away from the anode electrode and the termination structure. In another embodiment, the dielectric field plate includes a first dielectric layer and a recessed second dielectric layer. In another embodiment, the dielectric field plate and the nitride-based epitaxial layer are formed with a slant profile at a side facing the Schottky junction of the Schottky diode. In another embodiment, the dielectric field plate is formed on a top surface of the nitride-based epitaxial layer and recessed from an end of the nitride-based epitaxial layer near the Schottky junction.