The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Dec. 22, 2017
Samsung Display Co., Ltd., Yongin-si, KR;
Unist(ulsan National Institute of Science and Technology), Ulsan, KR;
Jae Ik Lim, Yongin-si, KR;
Won Sang Park, Yongin-si, KR;
Hye Yong Chu, Yongin-si, KR;
Jang-Ung Park, Ulsan, KR;
Sung-Ho Shin, Ulsan, KR;
Sangyoon Jin, Ulsan, KR;
Seiho Choi, Ulsan, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY), Ulsan, KR;
Abstract
A pressure sensor includes a semiconductor layer, a gate electrode, a gate insulating layer, and a source electrode, and may be incorporated as a switching transistor in a display device. The gate electrode is configured to overlap the semiconductor layer. The gate insulating layer is disposed between the semiconductor layer and the gate electrode and includes a first insulating layer disposed on a surface of the semiconductor layer that faces the gate electrode and a second insulating layer comprising an elastic material disposed at least between the first insulating layer and the gate electrode. The source electrode and a drain electrode respectively coupled to spaced portions of the semiconductor layer.