The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Oct. 20, 2015
Applicant:
Cambridge Enterprise Limited, Cambridge, GB;
Inventors:
Assignee:
CAMBRIDGE ENTERPRISE LIMITED, Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/08 (2006.01); H01L 33/00 (2010.01); H01L 31/0232 (2014.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/445 (2006.01); H01L 27/28 (2006.01); H01L 27/32 (2006.01); H01L 29/51 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/02565 (2013.01); H01L 21/02628 (2013.01); H01L 21/445 (2013.01); H01L 27/283 (2013.01); H01L 27/286 (2013.01); H01L 27/3262 (2013.01); H01L 29/4908 (2013.01); H01L 29/516 (2013.01); H01L 29/66969 (2013.01); H01L 29/78391 (2014.09); H01L 29/78696 (2013.01); H01L 51/0097 (2013.01); H01L 51/052 (2013.01); H01L 51/0541 (2013.01); H01L 2227/323 (2013.01);
Abstract
A transistor device comprising an inorganic oxide semiconductor channel having a channel length L and a channel width W between source and drain conductors and capacitively coupled to a gate conductor via an organic polymer dielectric in contact with the inorganic oxide semiconductor channel. The gate voltage required to maintain a constant current of at least X nA between the source and drain conductors over a period of 14 hours while the gate and drain conductors are maintained at the same electric potential, varies by less than 1V, preferably less than about 0.2V; wherein X equals the W/L ratio multiplied by 50.