The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Sep. 12, 2018
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;

Inventor:

Daisuke Shinohara, Yokohama Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/402 (2013.01); H01L 29/42368 (2013.01); H01L 29/7835 (2013.01);
Abstract

A semiconductor device includes a first semiconductor region, a second semiconductor region, an insulating film, and first and second electrodes provided on the insulating film. The insulating film includes first to fourth portions. The first portion is disposed in a region including the region directly above the first semiconductor region. The second portion is disposed at a portion of the region directly above the second semiconductor region. The second portion is thicker than the first portion. The third portion is thinner than the second portion and thicker than the first portion. The fourth portion is thicker than the third portion. The first electrode is disposed in at least a region directly above the first portion. The second electrode is disposed in at least a region directly above the third portion.


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