The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Jun. 28, 2019
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Tsutomu Kiyosawa, Toyama, JP;
Abstract
A method of producing a semiconductor device includes the following steps (A), (B), and (C). In the step (A), a semiconductor epitaxial wafer is prepared. The semiconductor epitaxial wafer includes a body region. In the step (B), a channel layer is formed by epitaxial growth. In the step (C), a gate insulation film is formed on the channel layer. The channel layer contains impurity at a concentration ranging from 1×10cmto 1×10cm, inclusive, and has a thickness ranging from 10 nm to 100 nm, inclusive. In the steps of (B) and (C), a condition for the epitaxial growth and a condition for forming the gate insulation film are controlled so that a thickness distribution in the channel layer and a thickness distribution in the gate insulation film are positively correlated to each other.