The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Aug. 30, 2017
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Masahiro Koyama, Kawasaki, JP;

Tatsuo Shimizu, Shinagawa, JP;

Shinya Nunoue, Ichikawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/732 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 29/0684 (2013.01); H01L 29/1054 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/42316 (2013.01); H01L 29/2003 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, and an intermediate region. A position of the first electrode is between a position of the second electrode and a position of the third electrode. The first semiconductor region is separated from the first, second, and third electrodes. The second semiconductor region is provided between the second electrode and the first semiconductor region. The third semiconductor region is provided between the third electrode and the first semiconductor region. The intermediate region includes at least one of a first compound or a second compound. At least a portion of the first electrode is positioned between the second and third semiconductor regions. The intermediate region includes a first partial region, a second partial region, and a third partial region.


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