The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Oct. 21, 2015
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Kyoungwon Lee, Gwangmyeong-si, KR;
Yoonho Khang, Yongin-si, KR;
Myounggeun Cha, Seoul, KR;
Youngki Shin, Hwaseong-si, KR;
Woonghee Jeong, Seoul, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.