The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Jun. 06, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventor:

Doo-won Kwon, Seongnam-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 23/5223 (2013.01); H01L 24/92 (2013.01); H01L 25/0657 (2013.01); H01L 27/14636 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/80 (2013.01); H01L 24/94 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05546 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80447 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/94 (2013.01);
Abstract

A stacked complementary metal oxide semiconductor (CMOS) image sensor includes: a first semiconductor chip in which a plurality of pixels are in an upper area in a two-dimensional array structure and a first wiring layer is in a lower area; and a second semiconductor chip in which a second wiring layer is arranged in an upper area and logic elements are in a lower area, wherein the first semiconductor chip is coupled to the second semiconductor chip through a connection between a first metal pad in a first pad insulating layer in a lowermost portion of the first wiring layer and a second metal pad in a second pad insulating layer in an uppermost portion of the second wiring layer, and wherein a metal-insulator-metal (MIM) capacitor is in at least one of the first pad insulating layer and the second pad insulating layer.


Find Patent Forward Citations

Kwon, Doo-won. (2020). Stacked cmos image sensor (U.S. Patent No. 10573679). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10573679

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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