The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Jan. 04, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jung Bin Yun, Hwaseong-si, KR;
Eun Sub Shim, Hwaseong-si, KR;
Kyung Ho Lee, Suwon-si, KR;
Sung Ho Choi, Seoul, KR;
Jung Hoon Park, Hwaseong-si, KR;
Jung Wook Lim, Gunpo-si, KR;
Min Ji Jung, Daegu, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.