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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10573666 B1

PDFFull Text
Date of Patent:
Feb. 25, 2020

Filed:

Jun. 19, 2018

Display device

Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Isao Suzumura, Tokyo, JP;

Kazufumi Watabe, Tokyo, JP;

Yoshinori Ishii, Tokyo, JP;

Hidekazu Miyake, Tokyo, JP;

Yohei Yamaguchi, Tokyo, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:

Michael Best & Friedrich LLP

Primary Examiner:

David Vu

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/51 (2006.01); H01L 29/24 (2006.01); G02F 1/1368 (2006.01); G02F 1/133 (2006.01); G02F 1/1362 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G02F 1/1368 (2013.01); G02F 1/13306 (2013.01); G02F 1/136209 (2013.01); H01L 27/1251 (2013.01); H01L 27/1259 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 29/78675 (2013.01); G02F 2001/13685 (2013.01); G02F 2202/10 (2013.01); G02F 2202/104 (2013.01); H01L 27/3262 (2013.01);
Abstract

The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor. An oxide filmas an insulating material is formed on the oxide semiconductor. A gate electrodeis formed on the oxide film. A first electrodeis connected to a drain of the first TFT via a first through hole formed in the oxide film. A second electrodeis connected to a source of the first TFT via a second through hole formed in the oxide film

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