The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Jul. 10, 2014
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Chaoyang, District, Beijing, CN;
Inventor:
Zongliang Huo, Zhongguancun, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 21/324 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/324 (2013.01); H01L 21/3247 (2013.01); H01L 29/40117 (2019.08);
Abstract
A method of manufacturing three-dimensional semiconductor device includes the steps of: forming a stack structure of a plurality of a first material layers and a second material layers on a substrate in the memory cell region; etching the stack structure to form a plurality of trenches; forming channel layers in the plurality of trenches; and reducing the surface roughness and the interface state by performing annealing treatment to at least one surface of the channel layers.