The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

May. 24, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Nam-Gun Kim, Yongin-si, KR;

Joonkyu Rhee, Yongin-si, KR;

Ji-Hye Lee, Hwaseong-si, KR;

Chanmi Lee, Suwon-si, KR;

Taeseop Choi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 21/7682 (2013.01); H01L 21/76897 (2013.01);
Abstract

Example embodiments relate to a semiconductor device. The semiconductor device includes a substrate including an active region extending in a first direction, a plurality of bit lines running across the active region in a second direction crossing the first direction, a first spacer on a sidewall of the bit line, and a storage node contact on the active region between adjacent bit lines. The first spacer includes a first part between the storage node contact and the bit line, a second part between the first part and the storage node contact, and a third part between the first and second parts. A minimum vertical thickness of the first part is greater than a maximum vertical thickness of the third part. The maximum vertical thickness of the third part is greater than a maximum vertical thickness of the second part.


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