The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Aug. 21, 2018
Applicant:
Tc Lab, Inc., Gilroy, CA (US);
Inventor:
Harry Luan, Saratoga, CA (US);
Assignee:
TC Lab, Inc., Gilroy, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/108 (2006.01); H01L 29/74 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10802 (2013.01); H01L 21/02647 (2013.01); H01L 23/535 (2013.01); H01L 27/10844 (2013.01); H01L 29/66393 (2013.01); H01L 29/7436 (2013.01);
Abstract
A semiconductor structure for a DRAM is described having multiple layers of arrays of thyristor memory cells and associated peripheral circuitry. Memory cells in a vertical string extending through the layers have an electrical connection to one terminal of the memory cells in that string. Word lines couple the strings together. Each layer of the array also includes bit line connections to memory cells on that layer. Methods of fabricating the array are described.