The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Sep. 25, 2018
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Young Bae Kim, Cheongju-si, KR;
Kwang Il Kim, Cheongju-si, KR;
Jun Hyun Kim, Gumi-si, KR;
In Sik Jung, Gumi-si, KR;
Jae Hyung Jang, Daejeon, KR;
Jin Yeong Son, Cheongju-si, KR;
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.