The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

May. 17, 2019
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Junghoon Kim, Seoul, KR;

Byoungkwon Cho, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 24/95 (2013.01); H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 2224/95085 (2013.01); H01L 2224/95133 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract

The present disclosure can provide a display device, including a substrate, semiconductor light emitting devices having a first conductive electrode disposed on the substrate and formed in a ring shape on an upper edge thereof and a second conductive electrode formed on an upper central portion of the semiconductor light emitting device and surrounded by the first conductive electrode, a passivation layer formed to cover a side surface of the semiconductor light emitting device, and cover part of an upper surface of the semiconductor light emitting device, a first wiring electrode electrically connected to the first conductive electrode, and a second wiring electrode extended from an edge of the semiconductor light emitting device in a central direction of the semiconductor light emitting device to be electrically connected to the second conductive electrode, wherein part of the second wiring electrode overlaps with part of the first conductive electrode with the passivation layer interposed therebetween.


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