The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Mar. 06, 2018
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Akira Tojo, Naka, JP;

Tatsuya Kobayashi, Yokohama, JP;

Kazuo Shimokawa, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/78 (2013.01); H01L 31/02363 (2013.01);
Abstract

A semiconductor device includes a substrate, a device layer, and a film. The substrate includes a first semiconductor element, and has a first surface, a second surface, and a side surface between the first surface and the second surface. The device layer includes a second semiconductor element electrically connected to the first semiconductor element, and is provided on the first surface of the substrate. The film includes a first film including a first region, a second region, and a third region. The substrate is positioned between the first region and the device layer in a first direction. The substrate is positioned between the second region and the third region in a second direction crossing the first direction. The first film fills the unevenness of the second surface and the side surface.


Find Patent Forward Citations

Loading…