The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Jan. 04, 2017
Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Myung Ho Park, Cheongju-si, KR;

Beom Su Kim, Cheongju-si, KR;

Sun Hwan Kim, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/31 (2006.01); H01L 27/088 (2006.01); H01L 29/45 (2006.01); H01L 21/8234 (2006.01); H01L 21/66 (2006.01); H01L 23/482 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3114 (2013.01); H01L 21/561 (2013.01); H01L 21/823418 (2013.01); H01L 21/823487 (2013.01); H01L 22/14 (2013.01); H01L 23/482 (2013.01); H01L 27/088 (2013.01); H01L 29/45 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/45 (2013.01); H01L 27/0255 (2013.01); H01L 29/7397 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7816 (2013.01); H01L 29/7827 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05584 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48095 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/141 (2013.01); H01L 2924/17747 (2013.01); H01L 2924/181 (2013.01); H01L 2924/2064 (2013.01); H01L 2924/20641 (2013.01);
Abstract

A wafer-level chip-scale package includes: a power semiconductor comprising a first semiconductor device formed on a semiconductor substrate, and a second semiconductor device formed on the semiconductor substrate; a common drain electrode connected to the first semiconductor device and the second semiconductor device; a first source metal bump formed on a surface of the first semiconductor device; and a second source metal bump formed on the surface of the second semiconductor device; wherein the first source metal bump, the common drain electrode, and the second source metal bump form a current path in an order of the first source metal bump, the common drain electrode, and the second source metal bump.


Find Patent Forward Citations

Loading…