The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Aug. 09, 2018
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Shuji Tobashi, Hiratsuka, JP;

Masayuki Tsuchiya, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/3213 (2006.01); H01L 23/544 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); G03F 9/00 (2006.01); G03F 7/20 (2006.01); G03F 1/42 (2012.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); G03F 1/42 (2013.01); G03F 7/70633 (2013.01); G03F 9/7003 (2013.01); G03F 9/7084 (2013.01); H01L 21/0273 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 23/544 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a first photoresist film over a substrate, exposing a first pattern including an alignment pattern in a first region, forming, on the substrate, an alignment mark corresponding to the exposed alignment pattern, forming a second photoresist film over the substrate on which the alignment mark is formed, dividing a second pattern into a plurality of regions and exposing the divided regions separately in a second region while performing positioning with respect to the alignment mark, and developing the second photoresist film and forming the second photoresist film having the second pattern, wherein at least a part of the second region is located outside an effective exposure region of an exposure apparatus in exposure of the first pattern.


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