The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Dec. 05, 2018
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Jialin Pan, Kanagawa, JP;

Yoshihisa Kojima, Kanagawa, JP;

Kazutaka Takizawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G06F 3/06 (2006.01); G11C 7/04 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 3/061 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 7/04 (2013.01); G11C 11/5671 (2013.01); G11C 16/0466 (2013.01); G11C 16/32 (2013.01); G11C 16/349 (2013.01);
Abstract

A memory system includes a nonvolatile semiconductor memory including memory cells storing data, and a controller configured to control a read operation of the nonvolatile semiconductor memory to read data from the nonvolatile semiconductor memory. The controller is configured to determine a read voltage to be used for reading data from the nonvolatile semiconductor memory depending on whether the read operation is performed during a first period after an end of a write operation of the data or during a second period following the first period, upon determining that the read operation is performed during the first period, change the read voltage in accordance with an elapsed time after the end of the write operation of the data, and upon determining that the read operation is performed during the second period, determine the read voltage regardless of the elapsed time after the end of the write operation of the data.


Find Patent Forward Citations

Pan, Jialin. (2020). Memory system (U.S. Patent No. 10573394). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10573394

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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