The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Jan. 18, 2019
Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Thomas Andre, Austin, TX (US);

Syed M. Alam, Austin, TX (US);

Assignee:

Everspin Technologies, Inc., Chandler, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G06F 11/10 (2006.01); G11C 11/4094 (2006.01); G11C 7/12 (2006.01); G11C 8/08 (2006.01); G11C 8/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G06F 11/1048 (2013.01); G11C 7/12 (2013.01); G11C 8/08 (2013.01); G11C 8/14 (2013.01); G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 11/4094 (2013.01);
Abstract

In a spin-torque magnetic random access memory (MRAM) that includes local source lines, auto-booting of the word line is used to reduce power consumption by reusing charge already present from driving a plurality of bit lines during writing operations. Auto-booting is accomplished by first driving a global word line to a first voltage. Driving the global word line to a first voltage results in a second voltage passed to the word lines. Subsequent driving of the plurality of bit lines that are capacitively coupled to the word line causes the word line voltage to be increased to a level desired to allow sufficient current to flow through a selected memory cell to write information into the selected memory cell.


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