The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Nov. 19, 2018
Applicant:

Finisar Corporation, Sunnyvale, CA (US);

Inventors:

Daniel Mahgerefteh, Los Angeles, CA (US);

Bryan Park, Sunnyvale, CA (US);

Assignee:

Finisar Corporation, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); G02B 6/27 (2006.01); G02B 6/125 (2006.01); G02B 6/30 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1228 (2013.01); G02B 6/125 (2013.01); G02B 6/2726 (2013.01); G02B 6/305 (2013.01); G02B 2006/1209 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12147 (2013.01);
Abstract

An optical system includes a silicon (Si) substrate, a buried oxide (BOX) layer formed on the substrate, a silicon nitride (SiN) layer formed above the BOX layer, and a SiN waveguide formed in the SiN layer. In some embodiments, the optical system may additionally include an interposer waveguide adiabatically coupled to the SiN waveguide to form a SiN-interposer adiabatic coupler that includes at least the tapered section of the SiN waveguide, the optical system further including at least one of: a cavity formed in the Si substrate at least beneath the SiN-interposer adiabatic coupler or an oxide overlay formed between a top of a SiN core of the SiN waveguide and a bottom of the interposer waveguide. Alternatively or additionally, the optical system may additionally include a multimode Si—SiN adiabatic coupler that includes a SiN taper of a SiN waveguide and a Si taper of a Si waveguide.


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