The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Apr. 03, 2018
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Sungho Jin, San Diego, CA (US);

Chulmin Choi, San Diego, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23B 7/02 (2006.01); G03F 7/00 (2006.01); B05D 5/08 (2006.01); H01L 31/0236 (2006.01); C23C 22/83 (2006.01); C23C 22/66 (2006.01); B05D 5/00 (2006.01); B32B 7/02 (2019.01); A01N 25/34 (2006.01); B82B 3/00 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); B81C 1/00 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
B32B 7/02 (2013.01); B05D 5/00 (2013.01); B05D 5/08 (2013.01); B05D 5/083 (2013.01); C23C 22/66 (2013.01); C23C 22/83 (2013.01); G03F 7/0002 (2013.01); H01L 31/0236 (2013.01); H01L 31/02366 (2013.01); A01N 25/34 (2013.01); B81B 2203/0361 (2013.01); B81B 2207/11 (2013.01); B81C 1/00111 (2013.01); B81C 1/00206 (2013.01); B81C 1/00404 (2013.01); B81C 1/00428 (2013.01); B81C 1/00531 (2013.01); B82B 3/0038 (2013.01); B82Y 40/00 (2013.01); C23C 2222/20 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); Y02E 10/50 (2013.01); Y10T 428/24994 (2015.04); Y10T 428/249924 (2015.04);
Abstract

Devices, systems and techniques are described for producing and implementing articles and materials having nanoscale and microscale structures that exhibit superhydrophobic, superoleophobic or omniphobic surface properties and other enhanced properties. In one aspect, a surface nanostructure can be formed by adding a silicon-containing buffer layer such as silicon, silicon oxide or silicon nitride layer, followed by metal film deposition and heating to convert the metal film into balled-up, discrete islands to form an etch mask. The buffer layer can be etched using the etch mask to create an array of pillar structures underneath the etch mask, in which the pillar structures have a shape that includes cylinders, negatively tapered rods, or cones and are vertically aligned. In another aspect, a method of fabricating microscale or nanoscale polymer or metal structures on a substrate is made by photolithography and/or nano imprinting lithography.


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