The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

May. 08, 2018
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:

Sergey Velichko, Boise, ID (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/225 (2006.01); H04N 5/3745 (2011.01); H01L 27/146 (2006.01); H01L 25/16 (2006.01); H04N 5/374 (2011.01);
U.S. Cl.
CPC ...
H04N 5/37452 (2013.01); H01L 25/167 (2013.01); H01L 27/14645 (2013.01); H04N 5/2253 (2013.01); H04N 5/2254 (2013.01);
Abstract

An image sensor pixel may include a photodiode, one or more storage diodes, one or more potential barrier structures, one or more capacitors, and a floating diffusion region. The photodiode may be coupled to a storage diode and a first capacitor, and a first potential barrier structure may be interposed between the storage diode and the first capacitor. The photodiode may also be coupled to additional storage diodes and additional capacitors in a similar manner. Additionally, the photodiode may be directly separated from a given capacitor via a corresponding potential barrier structure. Each capacitor may store overflow charge from one or more storage diodes and/or the photodiode and may be connected to the floating diffusion via respective transistors.


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