The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Jun. 25, 2018
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Naotaka Matsuda, Mitaka, JP;

Seiki Igarashi, Saitama, JP;

Hideaki Kakiki, Matsumoto, JP;

Susumu Iwamoto, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H03K 17/0814 (2006.01); H02M 1/34 (2007.01); H01L 29/16 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08142 (2013.01); H01L 25/162 (2013.01); H01L 29/1608 (2013.01); H01L 29/861 (2013.01); H02M 1/34 (2013.01); H02M 2001/348 (2013.01);
Abstract

A semiconductor device of the present invention suppresses high frequency noise caused in a semiconductor device incorporating SiC elements. The semiconductor device includes semiconductor elements connected in series, a SiC diode element connected in parallel to the semiconductor element, and an oscillation suppressing circuit being connected in parallel to the semiconductor element and the SiC diode element and suppressing voltage fluctuation caused in the SiC diode element in response to turn-ons of the semiconductor element. The oscillation suppressing circuit suppresses voltage fluctuation caused in the SiC diode element in response to turn-ons of the semiconductor element thereby improving reliability of the semiconductor device.


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