The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Dec. 14, 2018
Applicant:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Inventor:
Hideyuki Satou, Kyoto, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/19 (2006.01); H03F 3/24 (2006.01); H03G 3/30 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0222 (2013.01); H03F 3/19 (2013.01); H03F 3/245 (2013.01); H03F 2200/451 (2013.01); H03G 3/3042 (2013.01);
Abstract
A power amplifier circuit includes a first transistor having a base supplied with an RF signal and a collector supplied with a variable power supply voltage corresponding to a level of the RF signal, the first transistor being configured to amplify the RF signal, a bias circuit including a second transistor that supplies a bias current to the base of the first transistor, and a bias adjustment circuit that decreases a current to be supplied from an emitter of the second transistor as the variable power supply voltage decreases, thereby decreasing the bias current to be supplied to the base of the first transistor.