The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Oct. 25, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Disclosed is a method of fabricating a semiconductor device. The method may include forming a mold layer on a substrate, the mold layer having a hole exposing a portion of the substrate, forming a phase transition layer with a void, in the hole, and thermally treating the phase transition layer to remove the void from the phase transition layer. The thermal treating of the phase transition layer may include heating the substrate to a first temperature to form a diffusion layer in the phase transition layer, and the first temperature may be lower than or equal to 55% of a melting point of the phase transition layer.