The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Jan. 05, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Ji-Hyun Jeong, Hwaseong-si, KR;
Jin-Woo Lee, Seoul, KR;
Gwan-Hyeob Koh, Seoul, KR;
Dae-Hwan Kang, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/144 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 27/2481 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/16 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01);
Abstract
Provided are a memory device and a method of manufacturing the same. Memory cells of the memory device are formed separately from first electrode lines and second electrode lines, wherein the second electrode lines over the memory cells are formed by a damascene process, thereby avoiding complications associated with CMP being excessively or insufficiently performed on an insulation layer over the memory cells.