The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Jul. 16, 2019
Applicant:
Glo Ab, Lund, SE;
Inventors:
Fariba Danesh, Los Altos Hills, CA (US);
Richard P. Schneider, Jr., Albuquerque, NM (US);
Fan Ren, Sunnyvale, CA (US);
Michael Jansen, Sunnyvale, CA (US);
Nathan Gardner, Sunnyvale, CA (US);
Assignee:
GLO AB, Lund, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/60 (2010.01); H01L 33/24 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 25/00 (2006.01); H01L 33/42 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 25/0753 (2013.01); H01L 25/50 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01L 33/42 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/95 (2013.01);
Abstract
A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.